Effect of Femtosecond Irradiation Laser on the Optical Properties of GaAs Solar Cell

The results of damage on the GaAs solar cells surface irradiated by femtosecond laser show that: the anti-reflective layer irradiated by laser is damaged when the laser energy is more than 1 uJ; and when the energy is increased to 5uJ, the anti-reflective layer is completely damaged. The comparison between theoretical damage depth and the experimental results reveal that: similarity between the theoretical calculation and experimental results is high when the laser energy is less than 6 uJ. There is no obvious change of the reflectance after irradiated by 1 uJ pulse energy which is about 8%, but it is increased to 32%, 38% after the pulse energy is increased to the 2 uJ and 3 uJ. The quantum efficiency are decreased to 13.71%, 55.78%, 83.01% at 500 nm and 3.94%, 35.52%, 46.78% at 800 nm when the cells are irradiated at 1 J, 2 J, 3 J.