微晶
材料科学
扫描电子显微镜
薄膜
氧化铟锡
带隙
铟
氧化锡
兴奋剂
分析化学(期刊)
位错
化学工程
纳米技术
复合材料
冶金
化学
光电子学
色谱法
工程类
作者
S. Thanikaikarasan,T. Mahalingam,S. Veeramuthumari,Luis Ixtlilco
标识
DOI:10.14447/jnmes.v16i2.33
摘要
Growth of lead sulphide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath containing Pb(CH3COO)2 and Na2S2O3. X-ray diffraction pattern showed that the deposited films possess cubic structure with most prominent reflection along (200) plane. The dependency of microstructural parameters such as crystallite size, strain and dislocation density with film thickness has been analyzed. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films possess a direct band gap value of 0.37 eV.
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