A strategy of high-sensitivity solar-blind photodetector for fabricating graphene surface modification ZnGa2O4/Ga2O3 core-shell structure nanowire networks

One-dimensional core-shell nanowires are considered the optimal choice for high-performance photodetectors with the ideal interfacial area, well-controlled structure, and better light absorption ability. There are lots of research about Ga2O3 wide band gap semiconductors applied in solar-blind photodetectors. However, the defects such as relatively slow response/recovery time and poor response rate have limited its application in photodetectors. In this work, a GaZn2O4/Ga2O3 core-shell nanostructure is successfully prepared by the CVD (Chemical Vapor Deposition) technique. Then, a strategy of MSM solar blind ultraviolet detector based on graphene surface modification core-shell nanowires is proposed. The device has a characteristic of nanowire network structure, interface heterojunction, and Schottky contact. According to the results, a significant performance of the device with 0.1% graphene surface modified ZnGa2O4/Ga2O3 nanowires is achieved, like, the faster response time (rise/down time, 130 m s/13 m s), and the higher detection capability of the solar-blind ultraviolet detector (responsivity, 64.5 mA/W). Our work provides a facile fabrication procedure to construct a high-performance photodetector.