离域电子
基态
凝聚态物理
物理
电子
超导电性
近藤效应
强相关材料
价(化学)
量子临界点
库仑
原子物理学
量子相变
量子力学
相变
作者
David W. Tam,Nicola Colonna,Neeraj Kumar,Cínthia Piamonteze,Fatima Alarab,Vladimir N. Strocov,Antonio Cervellino,T. Fennell,D. J. Gawryluk,E. Pomjakushina,Yeong‐Ah Soh,M. Kenzelmann
标识
DOI:10.1038/s42005-023-01339-1
摘要
Abstract The microscopic mechanism of heavy band formation, relevant for unconventional superconductivity in CeCoIn 5 and other Ce-based heavy fermion materials, depends strongly on the efficiency with which f electrons are delocalized from the rare earth sites and participate in a Kondo lattice. Replacing Ce 3+ (4 f 1 , J = 5/2) with Sm 3+ (4 f 5 , J = 5/2), we show that a combination of the crystal electric field and on-site Coulomb repulsion causes SmCoIn 5 to exhibit a Γ 7 ground state similar to CeCoIn 5 with multiple f electrons. We show that with this single-ion ground state, SmCoIn 5 exhibits a temperature-induced valence crossover consistent with a Kondo scenario, leading to increased delocalization of f holes below a temperature scale set by the crystal field, T v ≈ 60 K. Our result provides evidence that in the case of many f electrons, the crystal field remains the dominant tuning knob in controlling the efficiency of delocalization near a heavy fermion quantum critical point, and additionally clarifies that charge fluctuations play a general role in the ground state of “115” materials.
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