锐钛矿
动力学(音乐)
从头算
化学物理
氢键
量子
氢
材料科学
从头算量子化学方法
分子动力学
计算化学
化学
物理
量子力学
催化作用
分子
光催化
生物化学
声学
作者
Xiaodan Yan,Xiao Han,Jinlu He
标识
DOI:10.1021/acs.jpclett.5c01994
摘要
Using time-dependent density functional theory (TD-DFT) and nonadiabatic molecular dynamics (NAMD) simulations, we elucidate how hydrogen bonding and water dynamics regulate hole transfer at the anatase TiO2(101)/water interface. Compared to low-density water (LW), moderate-density water (MW) enhances hydrogen bonding between surface- and nonsurface-adsorbed water, restricting interfacial water mobility. This suppresses nonadiabatic coupling and slows the hole transfer. Conversely, higher-density water (HW) near the vacuum destabilizes hydrogen bonding networks, freeing interfacial water and amplifying thermal motion. Enhanced disorder strengthens nonadiabatic coupling, accelerating the hole transfer. Temperature-dependent simulations show that thermal energy overcomes hydrogen bonding constraints: elevated temperatures intensify water dynamics and nonadiabatic coupling, accelerating hole transfer. These results establish hydrogen bonding and thermal fluctuations as key regulators of charge dynamics at the semiconductor/liquid interfaces.
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