Control of Lateral Epitaxial Nanothin β-In2Se3 Grown by Molecular Beam Epitaxy: Implications in Fabricating of Next-Generation Transistors

This study was meticulously conducted, delving into the epitaxial growth of nanothin β-In2Se3 films on sapphire (0001) using molecular beam epitaxy. The growth temperature was carefully set at 480 °C, and the selenium to indium flux ratio (RSe/In) was systematically varied from 1 to 100. The phase transformation from γ-In2Se3 to β-In2Se3 was precisely controlled by manipulating the RSe/In and confirmed through Raman scattering measurements and synchrotron-based grazing-incidence wide-angle X-ray scattering. The surface morphology for various RSe/In of In2Se3 was analyzed by atomic force microscopy (AFM). The lowest surface roughness is around 0.58 nm, which is achieved under the RSe/In = 60 growth condition. The nanothin β-In2Se3 film with a layer-by-layer atomic arrangement was verified by high-resolution transmission electron microscopy. According to the experimental results, the growth dynamics of In2Se3 are proposed to be step-flow growth and horizontal growth under RSe/In 45 and 60 conditions, respectively. This research underscores the control of the growth mechanism by Se/In flux and its role in facilitating the In2Se3 epitaxy for integration in the development of 2D-materials-based future electronic devices.