焊接
互连
材料科学
可靠性(半导体)
硅
过程(计算)
缩放比例
通过硅通孔
电子工程
光电子学
机械工程
计算机科学
工程类
冶金
电信
物理
量子力学
操作系统
功率(物理)
数学
几何学
作者
Zhaozhi Li,Yoshihiro TOMITA,Adel A. Elsherbini,Pilin Liu,Holly A. Sawyer,Johanna M. Swan,Shawna M. Liff
标识
DOI:10.1109/ectc32696.2021.00082
摘要
This paper discusses the efforts to shrink the micro-bump pitch to 20 μm and then 10 μm with solder micro-bumps for silicon-on-silicon 3D assembly by leveraging alternate solder diffusion barrier metals and tuning the assembly process to realize both good yield and reliable interconnects. Specifically in this paper, the assembly process challenges are detailed and the impact of our barrier metal assessment and process optimization to resolve these technical challenges are discussed through the study of solder joint reliability results using internal 20 μm pitch and 10 μm pitch solder micro-bump test-vehicles (TV).
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