硫系化合物
材料科学
半导体
碲
光电子学
带隙
宽禁带半导体
红外线的
光子晶体
锗
石墨烯
光子学
制作
光电探测器
纳米技术
硅
光学
物理
冶金
作者
Skylar Deckoff–Jones,Yixiu Wang,Hongtao Lin,Wenzhuo Wu,Juejun Hu
出处
期刊:
日期:2020-02-26
卷期号:: 64-64
被引量:1
摘要
New narrow-gap two-dimensional (2-D) semiconductors exemplified by black phosphorus and tellurene are promising material candidates for mid-IR optoelectronic devices. In particular, tellurene, atomically thin crystals of elemental tellurium, is an emerging narrow-gap 2-D semiconductor amenable to scalable solution-based synthesis and large-area deposition. It uniquely combines tunable bandgap energies, high carrier mobility, exceptionally large electro-optic activity, and superior chemical stability, making it a promising and versatile material platform for mid-infrared photonics. Here we discuss the design and experimental realization of integrated photonic devices based on tellurene and other 2-D semiconductors specifically for the mid-IR spectral regime based on a chalcogenide glass (ChG) photonic platform.
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