太赫兹辐射
石墨烯
整改
光电子学
材料科学
热电效应
场效应晶体管
晶体管
等离子体子
电子迁移率
光电探测器
电压
纳米技术
物理
量子力学
热力学
作者
Denis Bandurin,I. Gayduchenko,Yang Cao,M. Moskotin,Alessandro Principi,I. V. Grigorieva,G. Gol'tsman,G. Fedorov,Dmitry Svintsov
摘要
Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.
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