空位缺陷
正电子湮没
正电子湮没谱学
材料科学
合金
氦
表征(材料科学)
光谱学
正电子寿命谱学
氢
原子物理学
纳米-
消灭
正电子
核物理学
凝聚态物理
纳米技术
物理
冶金
复合材料
电子
量子力学
作者
Te Zhu,Baoyi Wang,Xiangyu Lian,Shuoxue Jin,Runsheng Yu,Xingzhong Cao,Qiu Xu
标识
DOI:10.12693/aphyspola.137.235
摘要
In the present work, Fe9Cr model alloy was implanted with 100 keV He and 60 keV H ions at room temperature.Positron annihilation Doppler broadening spectroscopy was employed to detect (H, He)-V complexes with open volume in the irradiated specimens.The results show that the positron is sensitive to the relative position of the gas atoms decorating the open volume; i.e., to the configuration of the (H, He)-V complexes.The formation of H-vacancy clusters after H implantation and a large number of vacancies can be retained after H-V decomposes at room temperature.For the pre-implanted He situation (He + H), He-vacancy clusters are formed in advance and the post-implanted H introduces a large number of vacancies and decomposable H-vacancy clusters.The He-vacancy clusters forming in advance may recombine with vacancies and H atoms to form stable He-vacancy clusters and a small amount of He-H-V complex.
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