材料科学
光纤激光器
光学
激光器
连续波
铌酸锂
光电子学
光放大器
放大器
波长
物理
CMOS芯片
作者
Jinyan Dong,Xin Zeng,Shuzhen Cui,Jiaqi Zhou,Yan Feng
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2019-11-18
卷期号:27 (24): 35362-35362
被引量:24
摘要
We demonstrate a 21.2 W continuous-wave single frequency 780 nm laser by utilizing single-pass frequency doubling of a 49.8 W 1560 nm fiber amplifier in a periodically-poled magnesium-oxide-doped lithium niobate (MgO: PPLN) crystal. The conversion efficiency of the frequency doubling reaches up to 42.6%. The high power 1560 nm Erbium-doped fiber amplifier (EDFA) is in-band pumped by a 1480 nm Raman fiber laser. Maximum output power of 49.8 W is obtained at an incident 1480 nm laser of 60.6 W, corresponding to an amplification efficiency of 79.7%. To the best of our knowledge, this is the highest reported continuous-wave single frequency 780 nm laser, which is developed for advanced quantum technology with Rb cold atoms.
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