The influence on different incorporation elements concentration of (Ga2O3)x(Co)0.6-x (ZnS/Se)0.4 (x = 0.1, 0.3 and 0.5) chalcogenide thin films

The (Ga2O3)x(Co)0.6-x(ZnS/Se)0.4 thin film was fabricated by the PLD of different pressure and substrate temperature. The ability to control the growth of nano-scale films is proved by the results of thickness. The antireflection coating materials in the infrared spectral region are affirmed by the results of refractivity. The change of material composition having an important effect on the preparation process is depicted by the plasma plume. Stable amorphous structure is confirmed by XRD under the different preparation conditions. The change of material composition has an important impact on the bonding and microstructure of the material, which is confirmed by Raman spectra. The high transmittance in range 500–2500 nm is revealed in transmission spectra. The adjustable optical band is demonstrated via Tauc's equation calculation. The blue-shift of the PL spectra due to the change of concentration is certified. The highest mobility and changeable resistivity among existing chalcogenide material are reflected via Hall measurements. In conclusion, the specific concentration of multi-materials used in the infrared field is obtained, and of nano film with transmittance to 98%–100% is got in the range 1500–2500 nm. The high mobility 8.646 × 104 cm2(V S) and low resistivity 2.3 Ω · cm in the presented chalcogenide based multi-materials are tested. Therefore, we successfully accomplished the combination of semiconductor oxide and chalcogenide. Multi-incorporation nano-composites, which can be applied both in the field of optical and electricity by adjusting the doping elements concentration, are reported in this work.