Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy

The analysis of core levels positions of Ga3d, N1s and P2p at different etching depth from the plasma nitrided GaP (111) surface shows that the nitrogen ions interact with both Gallium and Phosphorous ions with nearly equal probability. The analysis of valance band spectra shows the type‐II band alignment between GaPN0.22/GaP and the valence band offset is ∼2.2±0.1 eV.