Vacancy‐Migration‐Enabled, Two‐Dimensional Gate‐Free Neuromorphic Devices for High‐Temperature Applications

ABSTRACT Due to the low carrier scattering and scale‐down capability, two‐dimensional (2D) materials are promising for building high‐temperature neuromorphic electronics that are highly needed for performing complex tasks above 125°C. However, current 2D high‐temperature neuromorphic devices based on conventional resistive switching mechanisms still have key problems, e.g., severe gate leakage in three‐terminal devices and a limited number of resistance states in two‐terminal devices at high operating temperatures. Here, we report a gate‐free, high‐temperature MoS 2 neuromorphic device with up to 256 tunable resistance states, representing the state‐of‐the‐art resistance state number in a two‐terminal device operating at high temperatures. In addition to the multi‐state function, the device also has an enhanced resistive switching ratio of ∼10 3 at 200°C and simulates diverse synaptic plasticities at 350°C. Such superior performance is enabled by Schottky barrier modulation through thermal‐activated directional migration of sulfur vacancies. The device further demonstrates remarkable potential for high‐temperature neuromorphic computing in handwritten digit recognition and reservoir‐computing‐based temporal data processing. This work provides a new strategy for developing high‐temperature neuromorphic devices based on 2D materials.