异质结
材料科学
范德瓦尔斯力
光电子学
半导体
带隙
密度泛函理论
吸收(声学)
微电子
光子学
电子迁移率
直接和间接带隙
电子能带结构
紫外线
载流子
混合功能
能量转换效率
可见光谱
钨
钙钛矿(结构)
电子结构
吸收光谱法
作者
Shi-Qing Wu,Chong-Chong Li,Xiang-Jie Xiong,Rui-Jia Hu,B Z Liu,Yufeng Ding,Yu‐Qing Zhao
标识
DOI:10.1016/j.chphi.2026.101115
摘要
Designing two-dimensional (2D) semiconductor van der Waals (vdW) heterojunctions is an effective strategy for realizing multifunctional microelectronic devices. In this work, we present the detailed calculations to investigate the optoelectronic properties of the vdW C s 2 Pb I 2 C l 2 / W S 2 heterojunction composed of 2D perovskite C s 2 Pb I 2 C l 2 and tungsten disulfide W S 2 by using the density functional theory. The calculated electronic structures show that the 2D C s 2 Pb I 2 C l 2 / W S 2 heterojunction exhibits a type-II band alignment with a band gap of 2.08 eV and high optical absorption coefficients in the visible light and ultraviolet light ranges, with a peak reaching 4 . 1 × 1 0 5 c m − 1 at 4.1361 eV (299.78 nm). The calculated charge carrier mobilities of 2D C s 2 Pb I 2 C l 2 / W S 2 heterojunction were dominated by electrons, with the maximum mobility rate reaching 7741.11 c m 2 · V − 1 · s − 1 . Combining the Shockley-Queisser limit with first-principle calculations, the predicted power conversion efficiencies of 2D C s 2 Pb I 2 C l 2 / W S 2 heterojunction were compared and discussed by employing different functionals . The above research provides a theoretical basis for the design of efficient 2D vdW photonic devices in future.
科研通智能强力驱动
Strongly Powered by AbleSci AI