神经形态工程学
光电子学
材料科学
薄膜晶体管
氧化铟锡
晶体管
电极
电气工程
图层(电子)
计算机科学
纳米技术
电压
工程类
化学
人工神经网络
物理化学
机器学习
作者
Kun Liang,Huihui Ren,Yan Wang,Dingwei Li,Yingjie Tang,Chunyan Song,Yitong Chen,Fanfan Li,Hong Wang,Bowen Zhu
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2022-06-01
卷期号:43 (6): 882-885
被引量:10
标识
DOI:10.1109/led.2022.3166507
摘要
Metal oxide semiconductors thin film transistors (TFTs) have become important candidates for neuromorphic computing applications by simulating the functions of biological synapses. In this article, optoelectronic synaptic transistors with tunable plasticity are achieved by utilizing printed indium tin oxide (ITO) channel and Ag/ITO dual-layer contact electrodes. The Ag/ITO dual-layer electrodes not only provide ITO TFTs with high electrical performance but enabled them with tunable plasticity. Under the synergistic electrical and optical modulation, both the short- and long-term plasticity in the printed ITO synaptic TFTs are emulated. These achievements are of great significance for applying printed synaptic transistors in optoelectronic neuromorphic hardware.
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