Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned $\mathrm{L}{\mathrm{a}}_{2/3}\mathrm{S}{\mathrm{r}}_{1/3}\mathrm{Mn}{\mathrm{O}}_{3}:\mathrm{ZnO}$ nanocomposites, in which $\mathrm{L}{\mathrm{a}}_{2/3}\mathrm{S}{\mathrm{r}}_{1/3}\mathrm{Mn}{\mathrm{O}}_{3}$ (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ($B$), and optical properties. In this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 \textmu{}A, the magnetoresistance displays a linear, negative, nonhysteretic $B$ field dependence. Surprisingly, when a large current is used, $I$ > 10 \textmu{}A, a hysteretic behavior is observed when the $B$ field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. A possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.