光电子学
材料科学
外延
能量转换效率
太阳能电池
基质(水族馆)
光伏系统
砷化镓
光伏
Lift(数据挖掘)
计算机科学
电气工程
纳米技术
工程类
地质学
数据挖掘
海洋学
图层(电子)
标识
DOI:10.1109/smelec.2014.6920869
摘要
Epitaxial lift-off (ELO) is a processing technique that enables thin epitaxial layers grown on GaAs substrate to be “peeled off” from the host substrate. The ELO process offers several key advantages for both performance enhancement and cost reduction of III-V electronic and optoelectronic devices. The epitaxial films can be transferred to new support substrates that are thin, flexible, lightweight, and with higher thermal conductivity than the original growth substrate. The GaAs substrate can be reused multiple times without any performance degradation. We have developed an ELO process capable of lifting off large areas of semiconductor material from substrates up to 6 inches in diameter without any degradation of material quality or performance characteristics. Solar cells with a 33% efficiency under 1-sun AM 1.5 and 31% efficiency at 1-sun under AMO were demonstrated using ELO. Production of this technology for fabricating thin, flexible large-area multi-junction solar cell arrays with very high efficiency has been established. Light weight portable solar sheets for remote charging have been produced. Other applications include electric-powered, unmanned aerial vehicles (UAVs), space satellites, and terrestrial solar concentrator systems.
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