放大器
射频功率放大器
电气工程
功率增加效率
LDMOS
功率带宽
电子工程
无线电频率
功率(物理)
线性放大器
功率增益
线性
电效率
工程类
计算机科学
晶体管
电压
物理
CMOS芯片
量子力学
作者
Pattrawut Srimuang,Nutdechatorn Puangngernmak,Suramate Chalermwisutkul
标识
DOI:10.1109/ecticon.2014.6839809
摘要
Radio frequency power amplifiers (RF PA) are widely used for several applications e.g. wireless communication, wireless power transmission (WPT) and radio frequency heating. In general, the choice of power amplifier's operating class is based on requirements regarding linearity and power efficiency. For applications in which linearity is not a critical issue whereas high efficiency is desired, switched-mode amplifier e.g. class E is suitable. Switched-mode operation of class E offers high efficiency with a simple topology, leading to optimal costs of production and system operation. This work presents design and implementation of a high power and high efficiency 13.56 MHz class E power amplifier with parallel load circuit. As a power device, LDMOS was chosen. The fabricated class E PA provides Power-Added Efficiency (PAE) of 94.6% with 21.92 power gain when maximum output power of 44.92 dBm (31 W) is delivered to the load. Industrial, Scientific and medical (ISM) bands Class E PA with parallel load circuit.
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