Recovery of the Ferroelectric Properties of Hydrogen-Damaged Ir/Pb(Zr,Ti)O3/Ir Capacitors by Post Annealing

In this paper, the recovery of the ferroelectric properties of Ir/Pb(Zr,Ti)O3/Ir thin film capacitors damaged by annealing in a hydrogen ambient has been described. The ferroelectric properties of the capacitors markedly degrade as a result of heat treatment in a hydrogen ambient at 400°C. These properties can be easily recovered to their initial state by post annealing using a rapid thermal annealing process in an oxygen ambient at 400°C for 1 min.