Selective plasma etching of Si from GaAs-on-Si wafers for microwave via-hole formation
作者
G. W. Turner,C.L. Chen,Michael K. Connors,L.J. Mahoney,W.L. McGilvary
出处
期刊：Electronics Letters [Institution of Engineering and Technology] 日期：1990-06-21卷期号：26 (13): 854-855被引量：1
标识
DOI：10.1049/el:19900559
摘要
Selective plasma etching has been used to form via holes in GaAs-on-Si wafers that are superior to the holes formed by conventional methods in semi-insulating GaAs wafers. The plasma etching technique has a variety of potential microwave device applications.
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