Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si

Strained Si1-xGex technology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si1-xGex materials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si1-xGex/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si1-xGex/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.