Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique

Al2O3 films were grown on Si substrates by microwave generated remote plasma assisted atomic layer deposition technique (PA-ALD). The thickness of the Al2O3 films would be controlled by the ALD cycles. For the X-ray photoelectron spectroscopy results of Al2O3 film, carbon compounds didn't exist into Al2O3 film. The MOS capacitor obtained by PA-ALD had small hysteresis and the interface trap density of 4.5x1010cm-2eV-1.