InP-based multiple type-II quantum-well integrated waveguide p-i-n photodiodes for mid-infrared detection

We present an InP-based p-i-n photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2 μm detection. The fabricated photodiode shows a responsivity of 0.24 A/W at 2 μm, with dark current as low as 1 μA at -2 V, and 3 dB-bandwidth of 2 GHz under 1.55 μm optical illumination.