计算机科学
与非门
德拉姆
延迟(音频)
字节
闪光灯(摄影)
计算机硬件
操作系统
并行计算
嵌入式系统
计算机网络
电信
频道(广播)
艺术
视觉艺术
作者
Hirofumi Takishita,Yutaka Adachi,Chihiro Matsui,Ken TAKECUHI
标识
DOI:10.1587/transele.e101.c.253
摘要
NAND flash memories used in solid-state drives (SSDs) will be replaced with storage-class memories (SCMs), which are comparable with NAND flash in their cost, and with DRAM in their speed. This paper describes the performance difference of the SCM/NAND flash hybrid SSD and the SCM-based SSD with between sector-unit read (512 Byte) and page-unit read (16 KByte, NAND flash page-size) using synthetic and real workload. Also, effect of the SCM read-unit size on SSD performance are analyzed. When SCM write/read latency is 0.1 us, performance difference of the SCM/NAND flash hybrid SSD with between page- and sector-unit read is about 1% and 6% at most for the write-intensive and read-intensive workloads, respectively. However, performance of the SCM-based SSD is significantly improved when sector-unit read is used because extra read latency does not occur. Especially, the SCM-based SSD IOPS is improved by 131% for proj_3 (read-hot-random), because its read request size is small but its read request ratio is large. This paper also shows IOPS of SCM-based SSD write/read with sector-unit read can be predicted by the average write/read request size of workloads.
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