SILICON SELECTIVE AND LATERAL OVERGROWTH EPITAXY : GROWTH AND ELECTRICAL EVALUATION FOR DEVICES

Selective epitaxial garowth of monocrystalline silicon and epitaxial lateral overgrowth have emerged as important processing steps for advanced processing technologies, The problems associated with these steps, such as deposition non-uniformity, material quality, and masking oxide deterioration have been investigatted. Devices have been built to evaluate the epitaxially grown material with respect to its suitability for circuit fabrication. The results give fundamental criteria that can be used in any kind of reactor system to achieve good quality selective epitaxy.