Optical Absorption and Emission in Nitrogen‐Implanted Ga 2 O 3 Controlled by Dynamic Defect Annealing

Abstract A systematic investigation of the optical emission and absorption properties in nitrogen‐implanted Ga 2 O 3 in correlation with its polymorphic stability controlled by dynamic defect annealing is undertaken. It is demonstrated that dynamic annealing processes, determined by the irradiation temperatures, significantly influence both disorder accumulation and phase transformations in β‐Ga 2 O 3 , in turn, leading to a modulation of the absorption and emission properties of the implanted material. Specifically, room‐temperature implantation induces β‐to‐γ phase transitions, accompanied by an enhancement of the characteristic green luminescence (GL) band. In contrast, implantation at elevated temperatures suppresses γ‐phase formation and promotes the emergence of strong red luminescence (RL) emission. The results are interpreted within the framework of competing effects between defects generated during the β‐to‐γ phase transformation and the incorporation of implanted nitrogen atoms. The presented findings contribute to a deeper understanding of dopant‐defect interactions in Ga 2 O 3 as well as modulation of the optical properties of its polymorphs.