可制造性设计
平版印刷术
计算机科学
块(置换群论)
电子工程
超大规模集成
增采样
特征(语言学)
多重图案
计算机工程
半导体器件制造
联营
光学接近校正
集成电路布局
计算光刻
质量(理念)
还原(数学)
像素
光刻
图像质量
计算机体系结构
失真(音乐)
集成电路
过程集成
可重构性
反向
作者
Hui Xu,Yu Zhang,Xia Sun,Yong Xue,Jiale Li,Zihao Li,Ruijun Ma,Zhengfeng Huang
出处
期刊:Journal of micro/nanopatterning, materials, and metrology
[SPIE - International Society for Optical Engineering]
日期:2025-12-19
卷期号:24 (04)
标识
DOI:10.1117/1.jmm.24.4.043203
摘要
BackgroundMask optimization is essential in very-large-scale integration (VLSI) design to achieve manufacturability as feature sizes continue to shrink. This evolution presents significant challenges in printability and computational efficiency. The inverse lithography technique (ILT), a widely adopted resolution enhancement technique, enhances mask quality but is often hindered by high computational demands.AimWe aim to develop an efficient and high-quality mask optimization framework that addresses the computational challenges of ILT while improving mask printability.ApproachWe propose UC-ILT, a novel mask optimization framework that integrates the convolutional block attention module, a channel-wise cross fusion transformer, and pixel shuffle layers for efficient upsampling. This hybrid approach enhances feature extraction, accelerates model training, and improves mask printability by leveraging advanced attention mechanisms and efficient upsampling techniques.ResultsQuantitative evaluations demonstrate that UC-ILT significantly enhances mask printability and reduces model-building time. The framework effectively addresses critical challenges in ILT mask optimization, achieving superior performance metrics compared with existing methods.ConclusionsUC-ILT advances VLSI mask optimization by improving manufacturability and computational efficiency. This framework contributes to the semiconductor industry by facilitating faster design cycles and enhancing mask quality, thereby supporting the production of advanced semiconductor devices.
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