极紫外光刻
表征(材料科学)
材料科学
过程(计算)
纳米技术
计算机科学
操作系统
作者
Hidetami Yaegashi,Arisa Hara,Soichiro Okada,Satoru Shimura
标识
DOI:10.2494/photopolymer.32.155
摘要
Towards realistic adoption of EUV technology, material/process induced defect must be considerable problem. Several excellent studies have been introduced before and it mainly focused on the relation between defect number and pattern size and pattern pitch. Unfortunately, the study related defect transfer behavior have not been quite few, despite defect inspection is executed through top-down SEM.
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