Investigations of the characteristics and chemical bonds of Al and F co-doped ZnO films as a function of F2flow rate

In this study, we investigate the effect of fluorine (F[Formula: see text] flow rate on the crystal characteristics and chemical bonds of Al-Doped ZnO (AFZO) Films. At first, 1 wt% Al 2 O 3 was mixed with 99 wt% ZnO to form the Al-doped ZnO ceramic target, the radio frequency (RF) magnetron sputtering method was used to deposit the AFZO films by introducing different flow rates of F 2 gas using F 2 /(Ar + F 2 ) mixing atmosphere during the deposition process. F 2 flow rates (F 2 /(Ar + F 2 )) were changed in the range of [Formula: see text]%, and F 2 ratio was controlled using the mixing gases of (F 2 (5%) + 95% Ar) and pure Ar. AFZO films were deposited on the EagleXG glass and the films’ thickness was about 330 nm by controlling the deposition time. After AFZO films were deposited, their crystalline structure and electrical characteristics were well investigated. Finally, a comparative study of surfaces of AFZO films was investigated using X-ray photoelectron spectroscopy (XPS) to find the variations of the chemical bonds as the deposition temperature and F 2 flow rate were changed.