Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon‐on‐Insulator‐Based Transistor‐Like Device

Herein, the AC magnetoresistance (MR) in the silicon‐on‐insulator (SOI)‐based Fe/Si/SiO 2 /p‐Si structure is presented. The structure is used for fabricating a back‐gate field‐effect pseudo‐metal–oxide–semiconductor field‐effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic‐field‐driven SOI‐based devices and high‐frequency circuits.