逐次逼近ADC
位(键)
氧化物
材料科学
计算机科学
电子工程
电气工程
工程类
冶金
电容器
电压
计算机网络
作者
Jun-Rong Chen,Xiang-Lin Mei,Yunfeng Hu,Lei Zhou,Miao Xu,Lei Wang,Weijing Wu,Yurong Liu,Junbiao Peng
标识
DOI:10.1088/2058-8585/ad3ce8
摘要
Abstract This paper presents a flexible fully integrated 4-bit successive approximation register (SAR) analog-to-digital converter (ADC), which is fabricated by unipolar n -type indium-zinc-oxide thin-film transistors. A bootstrap switch and a comparator with a pre-amplifier are proposed and employed to realize the SAR ADC. The fabricated SAR ADC achieves a sampling rate of up to 20 kHz and a peak signal-to-noise and distortion ratio of 22.9 dB, corresponding to an effective-number-of-bits of 3.52 bits. The static performance of −0.58/+0.37 LSB DNL and −0.49/+0.39 LSB INL is achieved.
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