钝化
等离子体增强化学气相沉积
化学计量学
硅烷
半导体
化学气相沉积
图层(电子)
材料科学
氩
薄脆饼
光电子学
分析化学(期刊)
化学工程
纳米技术
化学
硅
复合材料
物理化学
工程类
有机化学
作者
Duy Phong Pham,Hongrae Kim,Jong-Woo Choi,Dae Jong Oh,Yunchul Chung,Wonbae Jeon,Jungyun Jo,Vinh Ai Dao,Suresh Kumar Dhungel,Junsin Yi
标识
DOI:10.1016/j.optmat.2023.113536
摘要
We propose an in-situ stoichiometric SiO2 layer deposition using plasma-enhanced chemical vapor deposition (PECVD) to replace typical outside SiO2 deposition for semiconductor devices, such as thermal oxidation and/or wet chemical oxidation. The SiO2 films deposited in a silane (SiH4), argon (Ar), and carbon dioxide (CO2) precursor gas mixture are compared to those deposited in a standard SiH4+CO2 plasma environment. Ar gases are introduced into the plasma environment of silane (SiH4) and carbon dioxide (CO2) to improve the optoelectronic properties and stoichiometry of SiO2. The addition of the Ar gases promotes the dissociation of SiH4 and CO2, resulting in an increase in the deposition rate and a decrease in the SiO2 refractive index. The addition reduces the dielectric constant of SiO2 by analyzing the metal-oxide-semiconductor structure. The resultant SiO2 shows excellent surface passivation of crystalline silicon wafers. The mechanism of SiO2 formation in PECVD with mixture gases is thoroughly addressed. The in-situ PECVD-based stoichiometric SiO2 layer is expected to reduce the complexity of the semiconductor device procedure.
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