材料科学
光伏系统
太阳能电池
光电子学
能量转换效率
开路电压
短路
钙钛矿(结构)
钙钛矿太阳能电池
电流密度
图层(电子)
电压
纳米技术
电气工程
化学
结晶学
物理
量子力学
工程类
作者
Yizhou He,Yifan Zhou,Qi Wang,Qianxi Hao,Xiaowei Guo,Shaorong Li
出处
期刊:Solar RRL
[Wiley]
日期:2023-03-23
卷期号:7 (10)
被引量:4
标识
DOI:10.1002/solr.202300030
摘要
Lead‐free double perovskite Cs 2 AgBiBr 6 has attracted wide attention owing to its nontoxic and stable properties. Recently, hydrogenated Cs 2 AgBiBr 6 (HCABB) films have been shown to possess superior optoelectronic properties than pristine Cs 2 AgBiBr 6 , and the double perovskite solar cell (DPSC) based on the films broke the efficiency record of DPSCs as soon as it was proposed. However, its poor energy band alignment and thin absorber layer thickness prevent HCABB from realizing its full photovoltaic potential. In this article, we design a lead‐free all‐inorganic HCABB‐based DPSC for application purposes. To explore its photovoltaic potential, we numerically optimize the transport layer materials, the thickness and bulk defect density of the absorber layer, the interface defect densities, the back contact material, and the parasitic series and shunt resistances step by step for the HCABB‐based DPSC. We predict the HCABB‐based DPSC with the structure of FTO/Nb 2 O 5 /HCABB/CuI/Cu can achieve an open‐circuit voltage of 1.139 V, short‐circuit current density of 22.40 mA cm −2 , fill factor of 83.35%, and power conversion efficiency of 21.28%. Overall, our work explores the photovoltaic potential of HCABB and provides guidance for fabricating more efficient HCABB‐based DPSCs.
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