神经形态工程学
计算机科学
卷积神经网络
MNIST数据库
核(代数)
闪存
计算机硬件
与非门
闪光灯(摄影)
人工神经网络
并行计算
计算机工程
嵌入式系统
人工智能
算法
逻辑门
视觉艺术
艺术
组合数学
数学
作者
Min Song,Hwiho Hwang,Geun Ho Lee,Suhyeon Ahn,Sungmin Hwang,Hyungjin Kim
出处
期刊:Electronics
[MDPI AG]
日期:2023-11-27
卷期号:12 (23): 4796-4796
被引量:3
标识
DOI:10.3390/electronics12234796
摘要
A flash memory is a non-volatile memory that has a large memory window, high cell density, and reliable switching characteristics and can be used as a synaptic device in a neuromorphic system based on 3D NAND flash architecture. We fabricated a TiN/Al2O3/Si3N4/SiO2/Si stack-based Flash memory device with a polysilicon channel. The input/output signals and output values are binarized for accurate vector-matrix multiplication operations in the hardware. In addition, we propose two kernel mapping methods for convolutional neural networks (CNN) in the neuromorphic system. The VMM operations of two mapping schemes are verified through SPICE simulation. Finally, the off-chip learning in the CNN structure is performed using the Modified National Institute of Standards and Technology (MNIST) dataset. We compared the two schemes in terms of various parameters and determined the advantages and disadvantages of each.
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