正交晶系
电极
单斜晶系
四方晶系
材料科学
原子层沉积
铁电性
退火(玻璃)
分析化学(期刊)
锡
金属
图层(电子)
结晶学
化学
复合材料
晶体结构
电介质
冶金
光电子学
物理化学
色谱法
作者
Deokjoon Eom,Jehoon Lee,Woohui Lee,Joo-Hee Oh,Changyu Park,Jin–Yong Kim,Hyangsook Lee,Eunha Lee,Hyoungsub Kim
标识
DOI:10.1088/1361-6463/acaf0a
摘要
Abstract The combined effects of the atomic-layer-deposition (ALD) temperature (220 °C–280 °C) and metal electrodes (TiN and Mo) on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 films were studied. Regardless of the metal electrode, a tetragonal–orthorhombic–monoclinic phase evolution sequence was observed with increasing ALD temperature after post-metallization annealing. However, the phase transition temperature slightly changed depending on the metal electrode, which was predetermined based on the as-deposited states. Additionally, the out-of-plane orientation of the final orthorhombic grains was highly dependent on the crystallographic alignment of the metal electrode grains, resulting in different values of the maximum remanent polarization. In terms of long-term reliability, the fatigue characteristics were highly dependent on the electrode characteristics, and the wake-up characteristics were mainly affected by the initial phase distribution determined by both the ALD temperature and metal electrode.
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