Nanometer Order Separation Control of Large Working Area Nanogap Created by Cleavage of Single-Crystal Silicon Along {111} Planes Using a MEMS Device

制作 模板 微电子机械系统 材料科学 符号 纳米技术 光电子学 数学 医学 算术 病理 替代医学
作者
Masaki Shimofuri,Amit Banerjee,Jun Hirotani,Yoshikazu Hirai,Toshiyuki Tsuchiya
出处
期刊:Journal of microelectromechanical systems [Institute of Electrical and Electronics Engineers]
卷期号:32 (1): 67-73 被引量:6
标识
DOI:10.1109/jmems.2022.3213999
摘要

Nanogaps with a large working area and a precisely controlled separation of about 1 to 20 nm has important applications in nano photonics, thermal management, power generation, chemical sensing, etc. However, an effective method of fabricating such nanogaps has not yet been established. In addition, it has been necessary to evaluate the dependence of physical characteristics of nanogaps on the separation, but it has been technically and economically difficult to develop such a system. In this study, we developed a MEMS device, which can produce nanogaps with a large area and parallel smooth surfaces by the (111) plane cleavage of a single crystal silicon beam and can change and measure the separation of nanogaps. Using this device, nanogap fabrication by cleavage and separation control were uninterruptedly carried out while maintaining the cleanliness of the gap surfaces in vacuum; a nanogap with a large smooth surface area of $30 ~\mu \text{m}$ 2 was successfully controlled in the range of 14 nm– $1.5 ~\mu \text{m}$ . For a small separation of less than 100 nm, the control resolution was sufficiently high at 1 nm. This method is fully compatible with conventional fabrication technologies for not only MEMS but also other semiconductor devices and should contribute to the fabrication of devices that exhibit useful quantum effects with only minor modifications. [2022-0073]
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