Electrostatic gating-driven transition from Schottky contact to p–n junction in moiré patterned Ars/Gra heterostructures

Using first-principles calculations, the Moiré patterned Ars/Gra heterostructure is identified to transition from Schottky contact to p–n junction by electrostatic gating. Carrier transport also supports the finding of such electric phase transition.