材料科学
自旋(空气动力学)
扭矩
领域(数学)
凝聚态物理
轨道(动力学)
光电子学
机械工程
航空航天工程
物理
量子力学
工程类
数学
纯数学
作者
Meiling Li,Mengxi Wang,Xiaoguang Xu,Kangkang Meng,Bin He,Guoqiang Yu,Ang Li,Zedong Xu,Youfan Hu,Lian‐Mao Peng,Yong Jiang
标识
DOI:10.1002/adfm.202424086
摘要
Abstract Field‐free magnetization switching driven by spin‐orbit torque (SOT) is an up‐and‐coming solution for spintronic devices, which enables energy efficient reconfigurable logic‐in‐memory computing is well‐suited for next‐generation data‐intensive applications. However, the use of ferromagnetic/antiferromagnetic systems in flexible spin logic devices is still in the early stages of development. Here, a polyimide/Ta/Pt/Co/IrMn/Pt‐based devices are reported as a potential candidate for flexible field‐free programmable spin logic applications. By controlling the exchange bias at the Co/IrMn interface, the flexible Hall bar device has successfully realized SOT‐induced magnetization switching under zero field. Basing on its magnetization switching capability, the devices can realize all‐electric controlled flexible programmable spin logic. Using two Hall bar devices, AND, NOT, OR, NAND, and NOR Boolean logic functions can be achieved by controlling the path of the pulse current, which provides a new solution for flexible spin‐logic devices with all‐electric manipulation.
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