Evolution of EUV light source architecture for continued advancements in EUV high volume manufacturing

ASML has been making steady advances in Extreme Ultraviolet (EUV) light source capability for more than 15 years. Since introduction of the 250W EUV light source in 2018, which ushered in the era of EUV High Volume Manufacturing, the EUV source power delivered to lithography customers has doubled, with the latest generations of 0.55 numerical aperture (High NA) and 500W EUV light sources now operating at customer sites. In this paper, we outline the progression of EUV source capabilities driven by substantial evolution of various aspects of the EUV source architecture, and we introduce the next generation of >600W EUV light sources. These next generation light sources deploy a novel laser architecture for tin target formation as part of the laser produced plasma. The improved target formation process enables an improved conversion efficiency of laser to EUV light, improved tin debris characteristics, and long-term power-scaling capabilities enabling >1000W EUV light sources in the coming years.