杰纳斯
凝聚态物理
自旋电子学
异质结
材料科学
半导体
自旋(空气动力学)
费米能级
物理
纳米技术
光电子学
量子力学
铁磁性
热力学
电子
作者
Bhagyashri Devaru Bhat
标识
DOI:10.1088/1361-648x/ace8e4
摘要
Janus transition metal dichalcogenide monolayers have shown a lack of mirror symmetry perpendicular to the 2D plane. The breaking of out-of-plane symmetry, along with the spin-orbit coupling, induces Rashba spin-splitting (RSS) in these materials. In this work, RSS in Janus tin dichalcogenide monolayers are studied. In addition, the heterostructures (HSs) of Janus SnXY and WXY (X, Y = S, Se, Te; X ≠ Y) monolayers are discussed. A RSS energy of about 43 meV, more significant than the room temperature energy, is observed in the Janus SnSSe/WSSe HS. The consequences of vertical strain on the semiconducting HS are examined. Compressive vertical strain enhances and tensile strain reduces, the spin-splitting. For the compressive strain of 10.4%, Janus SnSSe/WSSe HS remains semiconductor with only Rashba bands surrounding near the Fermi level. Enhanced Rashba parameter of about 0.96 eV Å and splitting energy of about 72 meV are observed. These findings confirm that Janus SnSSe/WSSe HS is a productive Rashba material for spintronic device applications.
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