群(周期表)
离子束
离子
光电子学
材料科学
梁(结构)
工程物理
化学
纳米技术
光学
物理
有机化学
作者
Mateus G. Masteghin,B. N. Murdin,Dominic A. Duffy,S. K. Clowes,David Cox,Stephen J. Sweeney,R.P. Webb
标识
DOI:10.1088/1361-648x/ad649f
摘要
Abstract In this perspective article, we discuss the application of ion implantation to manipulate strain (by either neutralizing or inducing compressive or tensile states) in suspended thin films. Emphasizing the pressing need for a high-mobility silicon-compatible transistor or a direct bandgap group-IV semiconductor that is compatible with complementary metal–oxide–semiconductor technology, we underscore the distinctive features of different methods of ion beam-induced alteration of material morphology. The article examines the precautions needed during experimental procedures and data analysis and explores routes for potential scalable adoption by the semiconductor industry. Finally, we briefly discuss how this highly controllable strain-inducing technique can facilitate enhanced manipulation of impurity-based spin quantum bits (qubits).
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