InGaN quantum dots for micro-LEDs

Micro-scale light-emitting diodes (micro-LEDs) have received widespread attention in recent years for applications in display and optical communication. Compared with conventional quantum well active regions, quantum dots (QDs) can increase the carrier concentration at the same current density, which is beneficial for improving the efficiency and bandwidth of LEDs at low current densities. This is exactly what micro-LEDs need for display and communication applications. In this Perspective, we give a general introduction to InGaN QDs and provide an overview of the growth of InGaN QDs by metal-organic chemical vapor deposition. We then discuss the advances in green and red micro-LEDs based on InGaN QDs for display applications. This is followed by recent progress on high-speed blue micro-LEDs, which have great potential for use in chip-to-chip optical interconnections. Finally, we address the remaining challenges for a further improvement in InGaN QD-based micro-LEDs.