Enhanced quantum efficiency in flexible AlGaN deep-ultraviolet light-emitting diodes by external strain

Abstract Flexible electronic devices have great application potential in the field of next-generation consumer electronics. In this paper, we have demonstrated that applying external bending on AlGaN-based flexible deep-ultraviolet light-emitting diodes (DUV LEDs) can modulate the electrical characteristics of the quantum-well heterostructures. The internal quantum efficiency of DUV LEDs can be significantly improved by applying external strain on the device in bend-up mode. In addition, the peak emission of the DUV LEDs can be significantly tuned by bending the device into concave or convex curvatures. This desirable feature allows a single device to be applied in different environments and fields by applying external strain.