Atmospheric Pressure Selective Epitaxial Growth of Heavily in-situ Phosphorous-Doped Si(:C) Raised Sources and Drains

We have developed an innovative atmospheric pressure process for the selective co-flow deposition of Si(C):P Raised Sources and Drains (RSDs) at 700 °C – 800 °C. A Si:P growth rate that increased as the PH 3 mass-flow increased, together a P + ions concentration that reached at most 7x10 19 cm -3 , were associated with Si:P layers grown with SiH 2 Cl 2 , HCl and a PH 3 1% in H 2 bottle (with no dependence whatsoever on growth temperature). Wanting to probe even higher phosphine flows, we have switched over to PH 3 5% in H 2 bottles and studied at 700°C the growth kinetics and n-type doping of Si. The Si:P growth rate increased, stabilized then decreased (which is most likely due to surface poisoning) as the PH 3 mass-flow increased. This was associated with a sharp increase then a stabilization at nearly 10 20 cm -3 of the P + ion concentration. The resulting Si:P layers were single crystalline and slightly rough. Full selectivity versus SiO 2 (isolation) and SiN sidewall spacers was achieved on patterned wafers with this heavily chlorinated chemistry. Finally, we have evaluated the feasibility of adding SiCH 6 to the gaseous mixture to obtain SiC:P layers. The substitutional C concentration was rather small (at most 0.55%). Meanwhile, the resistivity was at first stable then increased, while the SiC:P growth rate monotonously decreased as the SiCH 6 mass-flow went up.