Exploiting silicon oxycarbides for integrated photonic applications

We report on the characteristics of silicon oxycarbide films deposited by reactive radio frequency magnetron sputtering of a silicon carbide target in the presence of argon and oxygen gases. Quantitative characterization of the silicon oxycarbide films is performed extensively by ellipsometry, scanning electron microscopy and atomic force microscopy. Integrated photonic waveguides are demonstrated in silicon oxycarbide films.