非阻塞I/O
二极管
异质结
材料科学
电场
光电子学
电气工程
拓扑(电路)
物理
化学
工程类
有机化学
量子力学
催化作用
作者
Weibing Hao,Qiming He,Xuanze Zhou,Xiaolong Zhao,Guangwei Xu,Shibing Long
标识
DOI:10.1109/ispsd49238.2022.9813680
摘要
In this study, we demonstrate an effective edge termination for vertical NiO/β-Ga 2 O 3 heterojunction diodes using a continuous p-NiO film as Junction Termination Extension (JTE). The JTE can spread out the edge electric field and reduce the peak electric field of the devices. The annealing process was optimized to suppress leakage current and increase I on /I off ratio up to ~10 10 . The record high breakdown voltage of 2.66 kV in heterojunction diodes with uniform distribution of leakage current was achieved. Analysis of temperature-dependent reverse current revealed that the reverse leakage mechanism of the devices is dominated by Poole-Frenkel emission. The breakdown voltage of 1.77 kV at 250 °C shows remarkable high-temperature voltage blocking capability of the devices and validates the great potential of NiO/β-Ga 2 O 3 diodes for high-temperature and high-voltage power electronic applications.
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