Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

Lattice-mismatch-induced defects were studied by means of deep-level transient spectroscopy in high-purity GaAs 1-x Sbx layers (x = O to 3%) grown by liquid phase epitaxy on GaAs substrates.Microscopic nature and formation mechanism of two electron traps and two hole traps, which appeared in the layers as a result of Sb incorporation into the crystal lattice, are briefly discussed.