Aggregation of Nitrogen on Oxygen Precipitate in Annealed Czochralski Silicon Wafer Observed by Secondary Ion Mass Spectroscopy Measurement

Nitrogen (N) distribution in the annealed Czochralski (CZ) wafer is investigated by secondary ion mass spectroscopy (SIMS) imaging measurement. Intensity mapping of secondary ions shows the aggregation of N on the oxygen precipitate in the annealed wafer. Infrared absorption peak caused by interstitial N pairs (N–N pairs) is observed in the as-grown wafer. Based on the experimental results of SIMS and Fourier transform infrared absorption (FT-IR) measurement, behavior of N during annealing for the annihilation of sub-surface void defects is discussed.