闪烁体
CMOS芯片
辐射
CMOS传感器
光学
物理
计算机科学
光电子学
计算机图形学(图像)
探测器
作者
Shunsuke Kurosawa,Yasuhiro Shoji,Jan Pejchal,Yuui Yokota,Akira Yoshikawa
标识
DOI:10.1088/1748-0221/9/07/c07015
摘要
A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd3(Al,Ga)5O12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camera (ORCA-Flash4.0, Hamamatsu) was revised and compared to a conventional CMOS, whose sensitivity is at the same level as that of a charge coupled device (CCD) camera. Without the scintillator, this system had a good position resolution of 2.1 ± 0.4 μm and we succeeded in obtaining the alpha-ray images using 1-mm thick Ce:GAGG crystal. This system can be applied for example to high energy X-ray beam profile monitor, etc.
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